Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.5
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.8
Maksimalna temperatura (Tj), oC: 175
Transition frequency (ft), MHz: 250
Collector capacitance (Cc), pF: 8
Forward current transfer ratio (hFE), min: 100
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