IRFZ44N power N-channel mosfet

Description IRFz44 Mosfet Transistor :

Advanced Power MOSFET

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 55 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 49 A
4. Drain power dissipation : PD = 126 W
5. Single pulse avalanche energy : Eas =
6. Avalanche curren : Iar = 50 A
7. Repetitive avalanche energy : Ear = 12.6 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +175 °C

Features

1. Avalanche Rugged Technology
2. Rugged Gate Oxide Technology
3. Lower Input Capacitance
4. Improved Gate Charge
5. Extended Safe Operating Area
6. 175°C Operating Temperature
7. Lower Leakage Current: 10mA (Max.) @ VDS = 60V
8. Lower RDS(ON): 0.020W (Typ.)